Low-voltage capacitor combines rapid switching with a trillion cycles without breakdown

A breakthrough has been made toward overcoming both the speed and endurance limitations of low-power memory. A research team led by professor Min Hyuk Park of the Department of Materials Science and Engineering at Seoul National University College of Engineering has developed a ferroelectric capacitor that operates rapidly at a voltage as low as 0.6 V and can still distinguish between information states without electrical breakdown after 1 trillion switching cycles.



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